 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1773 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* 2 1 Ratings 1000 30 5 15 5 100 150 -55 to +150 Unit V V A A A W C C Tch Tstg 2 2SK1773 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 1000 30 -- -- 2.0 -- 3.2 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.5 5.0 1700 700 315 25 110 210 135 0.85 1050 Max -- -- 10 250 3.0 2.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF / dt = 100 A / s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 800 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 3 A VGS = 10 V*1 ID = 3 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 10 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1773 Maximum Safe Operation Area Power vs. Temperature Derating 160 50 30 10 Operationm in this area is limited by RDS (on) 10 s 10 Pch (W) Drain Current I D (A) 0 120 s PW ) ) ot s C sh m 25 1 (1 = s c m (T n tio ra = C D 3 1 10 O pe Channel Dissipation 80 0.3 40 0.1 0.05 10 0 50 100 Case Temperature 150 Tc (C) 200 Ta = 25C 30 100 300 1000 3000 DS (V) 10000 Drain to Source Voltage V Typical Output Characteristics 10 10 V 8 Pulse Test Drain Current I D (A) 6 Drain Current I D (A) 8V 5.5 V 4 5 Typical Transfer Characteristics VDS = 10 V Pulse Test 5V 3 4 4V 2 V GS = 3.5 V 0 10 20 30 40 50 2 Tc = 75C 25C 1 -25C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 4 2SK1773 Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test Static Drain-Source on State Resistance R DS (on) ( ) 16 20 10 5 V GS = 10 V 50 Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 12 5A 8 2 1 0.5 0.2 4 2A ID = 1 A 4 8 12 16 20 0 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 10 10 Pulse Test VGS = 10 V 5 Forward Transfer Admittance |y fs| (S) Forward Transfer Admittance vs. Drain Current Static Drain-Source on State Resistance R DS (on) ( ) 8 Tc = - 25C 2 1 0.5 25C 75C 6 4 ID = 5 A 2 2A 1A 0.2 0.1 0.05 V DS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 0 -40 0 40 80 120 160 Case Temperature T C (C) Drain Current I D (A) 5 2SK1773 Body to Drain Diode Reverse Recovry Time 5000 10000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 2000 Ciss 1000 Capacitance C (pf) 1000 500 di / dt = 100 A / s VGS = 0, Ta =25C Coss 100 Crss 200 100 50 0.1 VGS = 0 f = 1 MHz 0.2 0.5 1 2 5 10 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 20 500 Switching Characteristics td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 800 VDS V GS 16 ID= 5 A 12 200 Switing Time t (ns) tf 100 tr 50 td (on) 20 10 . V GS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% 600 V DD = 250 V 400 V 400 600 V V DD = 600 V 400 V 250 V 0 40 80 120 160 8 200 4 0 200 5 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 6 2SK1773 Recerse Drain Current vs. Source to Drain Voltage 10 Pulse Test 8 Reverse Drain Current I DR (A) 6 4 VGS = 10 V 2 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 1s hot P ulse Tc = 25C 1.0 ch - c(t) = s(t) . ch - c ch - c = 1.25C / W, Tc = 25C PW D= T P DM T 1m 10 m Pulse Width PW (S) 100 m PW 0.01 100 1 10 7 2SK1773 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 V DD 10 % 10 % Vin 10 % Waveforms 90 % . = 30 V . td (on) 90 % tr 90 % td (off) tf 8 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 2SK1773
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |